Effects of the gas ambient in thermal activation of Mg-doped p-GaN on Hall effect and photoluminescence-Reference-Cited by-同舟云学术

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Effects of the gas ambient in thermal activation of Mg-doped p-GaN on Hall effect and photoluminescence

Published:2013-01 Issue:1 Volume:31 Page:011502
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Lu Wei,Aplin David,Clawson Arthur R.,Yu Paul K. L.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4768174

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode;ECS Journal of Solid State Science and Technology;2023-07-01

2. High responsivity n-ZnO nanorods/p-GaN heterojunction-based UV-A photodetectors;Semiconductor Science and Technology;2022-12-08

3. Investigation of the Effect of ITO Size and Mesa Shape on the Optoelectronic Properties of GaN-Based Micro LEDs;Crystals;2022-11-09

4. A study on GaN-based betavoltaic batteries;Semiconductor Science and Technology;2022-10-27

5. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al_xGa_2–xO₃ Sidewalls;ACS Omega;2022-04-20

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