Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1601306
Reference18 articles.
1. Metal contacts to gallium nitride
2. Low resistance ohmic contacts on wide band‐gap GaN
3. Very low resistance multilayer Ohmic contact to n‐GaN
4. Low-resistance ohmic contacts to p-type GaN
5. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
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