Shifts in the flatband voltage of metal‐oxide‐silicon structure due to iodine in SiO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96935
Reference5 articles.
1. An Mo gate 4K static MOS RAM
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4. Control of Positive Surface Charge in Si–SiO2 Interfaces by Use of Implanted Cs Ions
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