Thermal Field Stabilization of the Threshold Voltage of the Field Transistors of the Submicron Technology of the LSI

Abstract

On the basis of the analysis of the volume correspondence of the phases in the active gate system Si-SiO2, the possibility of obtaining a negative charge in the shutter system of submicron LSI is shown. Such a technological method has been experimentally verified at low temperature oxidation of silicon, which is patented. Studies have established that the magnitude of charge at the interphase boundary can be significantly influenced by introducing into the oxidizing atmosphere of halogen-containing compounds.