Influence of Metallic Contamination on Dielectric Degradation of MOS Structures-Reference-Cited by-同舟云学术

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Influence of Metallic Contamination on Dielectric Degradation of MOS Structures

Published:1998 Issue: Volume: Page:42-56
ISSN:
Container-title:Ultraclean Surface Processing of Silicon Wafers
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Author:

Takiyama Makoto

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-662-03535-1_4

Reference21 articles.

1. M. Takiyama, S. Ohtsuka, S. Hayashi, and M. Tachimori: Proceedings of the 19th Workshop on ULSI Ultra Clean Technology, 95–107, Tokyo (1992).

2. M. Takiyama et al.: Ultra Clean Technology, 5 (5/6), 345–359 (1993) (in Japanese).

3. M. Takiyama, S. Ohtsuka, S. Hayashi, and M. Tachimori: Extended Abstracts of the 7th International Symp. on Silicon Material Science and Technology, 346–357, San Francisco (1994).

4. M. Takiyama, S. Ohtsuka, T. Sakon, and M. Tachimori: IEICE Trans. Electron. E77-C(3), 464–472 (1994).

5. K. Honda, A. Ohsawa, and M. Toyokura: Appl. Phys. Lett. 45 (3), 270–271 (1984).

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