On the balance between silylene and silyl radicals in rf glow discharges in silane: The effect on deposition rates ofa‐Si:H
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339411
Reference38 articles.
1. Basic phenomena in reactive low pressure plasmas used for deposition and etching-current status
2. Plasma polymerization and deposition of amorphous hydrogenated silicon from rf and dc silane plasmas
3. A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane‐hydrogen mixtures
4. Ion and radical reactions in the silane glow discharge deposition of a-Si:H films
5. Glow discharge preparation of amorphous hydrogenated silicon from higher silanes
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2. Determining a Line Strength in the ν3 Band of the Silyl Radical Using Quantum Cascade Laser Absorption Spectroscopy;The Journal of Physical Chemistry A;2019-10-29
3. Initial growth kinetics of positive and negative hydrogenated Si cluster ions under the presence of silane radicals;Japanese Journal of Applied Physics;2019-03-19
4. Performance control for amorphous silicon germanium alloys by in situ optical emission spectroscopy;Thin Solid Films;2018-08
5. Monte Carlo Simulation of Chemical Reactions in Plasma Enhanced Chemical Vapor Deposition: from Microscopic View to Macroscopic Results;Silicon;2018-06-22
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