Time‐resolved study on the impact excitation and quenching processes of the 1.54 μm electroluminescence emission of Er ions in InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357441
Reference11 articles.
1. Impact excitation of the erbium‐related 1.54 μm luminescence peak in erbium‐doped InP
2. Characteristics of the electroluminescence and photoluminescence emission of erbium ions doped in InP and the energy transfer mechanism
3. Transient gain and cross talk in erbium-doped fiber amplifiers
4. Intra‐4f‐shell luminescence excitation and quenching mechanism of Yb in InP
5. Excitation and decay mechanisms of the intra‐4fluminescence of Yb3+in epitaxial InP:Yb layers
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1. Excitation paths in RE-doped III–V semiconductors;Materials Science and Engineering: B;2003-12
2. Enhanced Yb3+-related 0.98 μm emission in porous silicon and its time decay characteristics;Journal of Applied Physics;1998-01-15
3. Heterometallic Lanthanide−Group 14 Metal Chalcogenolates;Inorganic Chemistry;1997-10-01
4. Time Decay Characteristics of the Yb3+- Related 0.98 μm Emissions in Porous Silicon;MRS Proceedings;1997
5. Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy;Journal of Electronic Materials;1996-03
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