Enhanced Yb3+-related 0.98 μm emission in porous silicon and its time decay characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366789
Reference8 articles.
1. Time resolved photoluminescence from Yb3+ centers in InP:Yb
2. Intra‐4f‐shell luminescence excitation and quenching mechanism of Yb in InP
3. Thermal quenching mechanism of Yb intra‐4f‐shell luminescence in InP
4. Photoluminescence of ytterbium‐doped porous silicon
5. Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm
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1. Effect of Au film and absorption groups on minority carrier life of porous silicon;Current Applied Physics;2010-05
2. The optical properties of porous silicon produced by metal-assisted anodic etching;Journal of Materials Science;2007-06-26
3. Effect of post-treatment processes on the photoluminescence of porous silicon;Physica B: Condensed Matter;2005-07
4. Strong visible emission from porous GaP doped with Eu and Tb ions;Journal of Luminescence;2005-06
5. Self-assembled infrared-luminescent Er–Si–O crystallites on silicon;Applied Physics Letters;2004
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