Characteristics of the electroluminescence and photoluminescence emission of erbium ions doped in InP and the energy transfer mechanism
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349801
Reference19 articles.
1. Rare earth activated luminescence in InP, GaP and GaAs
2. Photoluminescence optimization and characteristics of the rare‐earth element erbium implanted in GaAs, InP, and GaP
3. Erbium-doped GaAs light-emitting diode at 1.54 μm
4. 1.54 μm room‐temperature electroluminescence of erbium‐doped GaAs and GaAlAs grown by molecular beam epitaxy
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1. Visible and infrared electroluminescence from an Er-doped n-ZnO/p-Si light emitting diode;physica status solidi (a);2008-01
2. Enhanced Yb3+-related 0.98 μm emission in porous silicon and its time decay characteristics;Journal of Applied Physics;1998-01-15
3. Time Decay Characteristics of the Yb3+- Related 0.98 μm Emissions in Porous Silicon;MRS Proceedings;1997
4. Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy;Journal of Electronic Materials;1996-03
5. Photoluminescence of ytterbium‐doped porous silicon;Applied Physics Letters;1995-10-30
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