A surface kinetics model for the growth of Si1−xGexfilms from SiH4/GeH4mixtures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352958
Reference16 articles.
1. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
2. Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentals
3. Silicon vapor phase epitaxial growth catalysis by the presence of germane
4. Temperature dependence of growth of GexSi1−xby ultrahigh vacuum chemical vapor deposition
5. A model for heterogeneous growth of Si1−xGexfilms from hydrides
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