Optical properties of self assembled GaN polarity inversion domain boundary
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3610449
Reference16 articles.
1. InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
3. Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy
4. The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence
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1. Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk;Nano Letters;2022-10-18
2. GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures;Crystal Growth & Design;2016-04-06
3. Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns;Nanotechnology;2016-01-13
4. Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal–organic vapour phase epitaxy;CrystEngComm;2016
5. Structure Modification to Tune the Electronic and Charge Transport Properties of Solar Cell Materials: Quantum Chemical Study;International Journal of Electrochemical Science;2015-04
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