The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2815748
Reference20 articles.
1. The toughest transistor yet [GaN transistors]
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5. Playing with Polarity
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2. Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal–Organic Vapor Phase Epitaxy;physica status solidi (b);2023-03-22
3. Evolution of the Ferroelectric Properties of AlScN Film by Electrical Cycling with an Inhomogeneous Field Distribution;Advanced Electronic Materials;2023-03-02
4. Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN;ACS Applied Electronic Materials;2023-01-09
5. Role of low temperature Al(Ga)N interlayers on the polarity and quality control of GaN epitaxy;Journal of Crystal Growth;2022-11
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