Affiliation:
1. Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center College of Engineering Seoul National University Seoul 08826 Republic of Korea
2. R&D Division SK Hynix Semiconductor Inc. Icheon Gyeonggi 17336 Republic of Korea
Abstract
AbstractThis work investigates the evolution of the ferroelectric (FE) performance of the sputtered aluminum scandium nitride (AlScN) thin film, which has a high remanent polarization (Pr, > 100 µC cm−2) and coercive field (Ec, > 6 MV cm−1), with the electric field cycling. The work aims at elucidating the underlying origin of the severe fatigue behavior, even with a relatively small number of endurance cycles (<105). When cycled with a low electric field, an internal field is created by charges trapped between the FE layer and the interfacial dielectric layer (non‐FE). On the other hand, fatigue is observed when cycled with a high electric field cycling. This work proposes a new method to simulate a switching current utilizing an inhomogeneous field mechanism and the appropriate circuit model to assess the thickness change of the non‐FE layer. It is concluded that the thickened non‐FE layer after the field cycling results in fatigue.
Funder
National Research Foundation of Korea
Subject
Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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