Role of low temperature Al(Ga)N interlayers on the polarity and quality control of GaN epitaxy

Author:

Su Zhaole,Li Yangfeng,Yin Haibo,Hai Yu,Hu Xiaotao,Song Yimeng,Kong Rui,Deng Zhen,Ma Ziguang,Du Chunhua,Wang Wenxin,Jia Haiqiang,Wang Dahai,Liu Xinyu,Jiang Yang,Chen Hong

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. David F Brown, Nicholas A Fichtenbaum, James S Speck, Steven P DenBaars and Umesh K Mishra, Recent progress in metal-organic chemical vapor deposition of (000–1) N-polar group-III nitrides;Keller;Semicond. Sci. Technol.,2014

2. Lei zhang, Yongliang Shao, Yongzhong Wu, Xiaopeng Hao, Haodong Zhang, Yuanbin Dai, Yuan Tian, Simulation and Growth Study of V/III Ratio Effects on HVPE Grown GaN;Li;Int. J. Electrochem. Sci.,2013

3. GaN vertical and lateral polarity heterostructures on GaN substrates;Hite;Journal of Crystal Growth,2011

4. Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition;Caroline;Appl. Phys. Lett.,2022

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