Effect ofa‐SiNx:H composition on band bending near the interface ofa‐Si:H/a‐SiNx:H layered structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337507
Reference12 articles.
1. Evidence for Lattice-Mismatch—Induced Defects in Amorphous Semiconductor Heterojunctions
2. Charge transfer doping in amorphous semiconductor superlattices
3. Properties of amorphous semiconductinga−Si:Ha−SiNx:Hmultilayer films and ofa−SiNx:Halloys
4. Anomalous surface photoconductivity in hydrogenated amorphous silicon
5. An investigation of some fundamental properties of a-Si from measurements of interface and surface effects
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3. Progressive degradation in a-Si:H/SiN thin film transistors;Thin Solid Films;2003-03
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