P-2: A Novel Structure of AMLCD Panel Using Poly-Si CMOS TFT-Reference-Cited by-同舟云学术

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P-2: A Novel Structure of AMLCD Panel Using Poly-Si CMOS TFT

Published:2004 Issue:1 Volume:35 Page:224
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Yang J. Y.,Kim Sang-Hyun,Park Yong-In,Lim Kyoung-Moon,Kim Chang-Dong

Publisher

Wiley

Reference8 articles.

1. T. Maeda et al., Dig Tech. Papers, AMLED, p13(2001)

2. K. Kanzaki., Dig Tech. Papers, AMLED, p71(2001)

3. Effect ofa‐SiNx:H composition on band bending near the interface ofa‐Si:H/a‐SiNx:H layered structures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of Edge Effect Induced by Positive Gate Bias Stress in Low-Temperature Polycrystalline Silicon TFTs With Channel Width Extension Over Source/Drain Regions;IEEE Transactions on Electron Devices;2020-12

2. P‐52: A Novel Six‐Mask Low‐Temperature Polycrystalline Silicon Architecture for TFT‐LCD Application;SID Symposium Digest of Technical Papers;2020-08

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