An investigation of some fundamental properties of a-Si from measurements of interface and surface effects-Reference-Cited by-同舟云学术

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An investigation of some fundamental properties of a-Si from measurements of interface and surface effects

Published:1983-12 Issue: Volume:59-60 Page:505-508
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Lecomber P.G.,Spear W.E.,Gibson R.A.,Mannsperger H.,Djamdji F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Determination of the density of gap states: field effect and surface adsorption

2. The characteristics and properties of optimised amorphous silicon field effect transistors

3. See also A.J. Snell et al, these proceedings.

4. Thermoelectric power, hall effect and density-of-states measurements on glow-discharge microcrystalline silicon

5. See, for example, W.E. Spear, these proceedings, and references cited therein.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal and Optical Quenching of the Photoconductivity in a-Si:H-Films;Disordered Semiconductors;1987

2. Effect ofa‐SiNx:H composition on band bending near the interface ofa‐Si:H/a‐SiNx:H layered structures;Journal of Applied Physics;1986-12-15

3. A refined theoretical analysis of photofield-effect measurements in a-Si : H thin-film transistors;Philosophical Magazine B;1986-05

4. Study of surface photovoltage in hydrogenated amorphous silicon;Journal of Applied Physics;1985-11-15

5. Amorphous silicon bibliography 1983 update introduction;Solar Cells;1985-02

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