A refined theoretical analysis of photofield-effect measurements in a-Si : H thin-film transistors-Reference-Cited by-同舟云学术

A refined theoretical analysis of photofield-effect measurements in a-Si : H thin-film transistors

Published:1986-05 Issue:5 Volume:53 Page:431-444
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Schropp R. E. I.¹,Harm A. O.¹²,Verwey J. F.¹

Affiliation:

1. a Department of Applied Physics , University of Groningen , Nijenborgh 18, 9747 , AG Groningen , The Netherlands

2. b Philips Research Laboratories , Eindhoven , The Netherlands

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818608240657

Reference16 articles.

1. Photoconductivity and recombination in doped amorphous silicon

2. Djamdji , F. Le Comber , P. G. and Spear , W. E. Proceedings of the MRS Conference. Strasbourg. Edited by: Pinard , P. and Kalbitzer , S. pp.569Paris: Les Editions de Physique.

3. Effect of annealing and light exposure on the field-effect density of states in glow-discharge a-Si: H

4. The photofield effect in a-Si: H thin film MOS transistors Theory and measurement

5. Anomalous surface photoconductivity in hydrogenated amorphous silicon

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3. Experimental and theoretical evidence of space-charge photomodulation in metal/insulator/amorphous semiconductor structures;Journal of Non-Crystalline Solids;1989-12

4. Space-charge photomodulation in metal/insulator/amorphous semiconductor structures (TFTs);IEEE Transactions on Electron Devices;1989

5. The illumination flux dependence of the photofield-effect current in amorphous silicon;Journal of Non-Crystalline Solids;1987-02