Effect of annealing and light exposure on the field-effect density of states in glow-discharge a-Si: H
Author:
Affiliation:
1. a James Franck Institute and Department of Physics , University of Chicago , Chicago , Illinois , 60637 , U.S.A.
2. b Max Planck Institut für Festkörperforschung , Stuttgart , F.R. , Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418638208227448
Reference35 articles.
1. Hydrogen evolution and defect creation in amorphous Si: H alloys
2. Recent developments in amorphous silicon solar cells
3. Light‐induced dangling bonds in hydrogenated amorphous silicon
4. Characterized of glow-discharge deposited a-Si:H
5. Determination of the density of gap states: field effect and surface adsorption
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