Determination of the density of gap states: field effect and surface adsorption-Reference-Cited by-同舟云学术

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Determination of the density of gap states: field effect and surface adsorption

Published:1980-11 Issue:3 Volume:2 Page:289-300
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Fritzsche H.

Publisher

Elsevier BV

Subject

General Engineering

Reference24 articles.

1. Electronic properties of substitutionally doped amorphous Si and Ge

2. Substitutional doping of amorphous silicon

3. Proc. 8th Int. Conf. on Amorphous and Liquid Semiconductors,1980

4. Effect of adsorbed gases on the conductance of amorphous films of semiconducting silicon‐hydrogen alloys

5. Influence of interface charges on transport measurements in amorphous silicon films

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface effects in hydrogenated amorphous silicon studied by photothermal-deflection experiments;Physical Review B;1991-06-15

2. Interface Effects on Photocarrier Transport in a-Si:H;MRS Proceedings;1991

3. Effect of light soaking on the short‐wavelength photoresponse in hydrogenated amorphous silicon;Journal of Applied Physics;1990-12

4. Optical Characterization of Interface, Surface and Bulk Defects in A-Si:H;MRS Proceedings;1990

5. Bonding defects in amorphous silicon alloys;Solar Cells;1987-06

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