Influence of interface charges on transport measurements in amorphous silicon films
Author:
Publisher
EDP Sciences
Link
http://jphys.journaldephysique.org/10.1051/jphys:0197800390110124100/pdf
Reference14 articles.
1. The Preparation and Properties of Amorphous Silicon
2. Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering
3. Hydrogenation of evaporated amorphous silicon films by plasma treatment
4. Reversible conductivity changes in discharge‐produced amorphous Si
Cited by 156 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. From Narrow-Gap and Semimagnetic Semiconductors to Spintronics and Topological Matter: A Life with Spins;Acta Physica Polonica A;2021-04
2. Complex nano-patterning of structural, optical, electrical and electron emission properties of amorphous silicon thin films by scanning probe;Applied Surface Science;2018-01
3. Charge transport in nanocrystalline SiC with and without embedded Si nanocrystals;Physical Review B;2015-05-26
4. Identification of Deep Level Defects in SiC Bipolar Junction Transistors;Materials Science Forum;2006-10
5. Contact potential measurements with a local Kelvin probe;Philosophical Magazine B;2002-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3