Interface Effects on Photocarrier Transport in a-Si:H-Reference-Cited by-同舟云学术

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Interface Effects on Photocarrier Transport in a-Si:H

Published:1991 Issue: Volume:219 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Persans P. D.,Arnzen D.,Possin G.,D'Anna L.,Zhao X. S.,Breton K.

Abstract

ABSTRACTWe discuss the absorption-length and film thickness dependence of photoconductivity in amorphous silicon using measurements of the ambipolar diffusion length and the Debye screening length.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference12 articles.

1. Photoconductivity in relaxation semiconductors including certain amorphous materials

2. Optical Characterization of Interface, Surface and Bulk Defects in A-Si:H

3. Steady‐state photocarrier grating technique for diffusion length measurement in photoconductive insulators

4. Effect of Silicon Thickness and Surface Passivation on the Characteristics of Amorphous Silicon thin Film Transistors

5. Photoelectronic properties of a‐Si:H and a‐Ge:H thin films in surface cell structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Use of a Field Effect Transistor to Study Phototransport Properties of a-Si:H;MRS Proceedings;1993-01-01

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