Effect of Silicon Thickness and Surface Passivation on the Characteristics of Amorphous Silicon thin Film Transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference2 articles.
1. Dual-gate a—Si:H thin film transistors
2. The effect of surface states and fixed charge on the field effect conductance of amorphous silicon
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Diffusion-limited transport in the off-state of amorphous Si thin-film transistors;Applied Physics Letters;2003-02-24
2. A back‐side passivation film ona‐Si:H thin film transistor;Journal of Applied Physics;1994-08-15
3. The Origin and Nature of Contact Resistance in a-Si:H TFTs;MRS Proceedings;1994
4. Use of a Field Effect Transistor to Study Phototransport Properties of a-Si:H;MRS Proceedings;1993-01-01
5. Back-Channel Surface Modifications for a-Si:H Thin Film Transistors, TFTs, by Exposure to Plasma Excited N2O;MRS Proceedings;1993
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