Optical Characterization of Interface, Surface and Bulk Defects in A-Si:H-Reference-Cited by-同舟云学术

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Optical Characterization of Interface, Surface and Bulk Defects in A-Si:H

Published:1990 Issue: Volume:192 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Persans P. D.,Arnzen D.,Possin G. E

Abstract

ABSTRACTWe present a new analysis approach which combines photoconductivity and photother-mal deflection spectroscopies in a-Si:H thin films of various thicknesses to profile electronic defects.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference14 articles.

1. Surface states and in-depth inhomogeneity in a-Si:H thin films: Effects on the shape of the PDS sub-gap spectra

2. Photothermal deflection spectroscopy and detection

3. Investigation of surface passivation of amorphous silicon using photothermal deflection spectroscopy

4. Photoelectronic properties of a‐Si:H and a‐Ge:H thin films in surface cell structures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Siloxane-based polymer epoxies for optical waveguides;Applications of Photonic Technology 6;2003-12-12

2. A deconvolution procedure for photothermal and photoconductive spectra of amorphous silicon films;Journal of Applied Physics;1992-04

3. Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films;Applied Physics Letters;1991-11-11

4. Interface Effects on Photocarrier Transport in a-Si:H;MRS Proceedings;1991

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