Photoelectronic properties of a‐Si:H and a‐Ge:H thin films in surface cell structures
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.574541
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices;Journal of Non-Crystalline Solids;2007-06
2. Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively);Journal of Non-Crystalline Solids;2006-11
3. Reduction of bonding constraints by self-organization in gate dielectrics for a-Si:H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs);Journal of Non-Crystalline Solids;2006-06
4. Application of constraint theory to Si-dielectric interfaces in a-Si:H and poly-Si thin film transistors (TFTs);Journal of Non-Crystalline Solids;2000-05
5. Why SiNx:H is the Preferred Gate Dielectric for Amorphous Si Thin Film Transistors (TFTS) and SiO2 is the Preferred Gate Dielectric for Polycrystalline Si TFTs;MRS Proceedings;1999
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