Application of constraint theory to Si-dielectric interfaces in a-Si:H and poly-Si thin film transistors (TFTs)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
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1. Pulsed-radio frequency plasma enhanced chemical vapour deposition of low temperature silicon nitride for thin film transistors;Thin Solid Films;2012-05
2. Defect scaling in non-crystalline floppy/under-constrained and rigid/over-constrained thin films: Applications to a-Se, a-Si, and a-Si(H);Journal of Non-Crystalline Solids;2008-05
3. Intermediate phases in binary and ternary alloys: a new perspective on semi-empirical bond constraint theory;Journal of Physics: Condensed Matter;2007-10-24
4. Chemical self-organization length scales in non- and nano-crystalline thin films;Solid-State Electronics;2007-10
5. Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices;Journal of Non-Crystalline Solids;2007-06
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