Author:
He S. S.,Stephens D. J.,Hamaker R. W.,Lucovsky G.
Abstract
ABSTRACTWe have fabricated normal and inverted staggered a-Si:H thin film transistors, TFTs, using silicon oxide/nitride double layer dielectrics. Significant improvements in the electrical performance of these TFTs have been obtained by integrating additional processingsteps into the usual processing cycles. These include; i) a pre-deposition nitridation ofthe a-Si:H surface for the top-gate devices, and ii) a post-deposition passivation of thea-Si:H surface (i.e., the back of the channel region) for the bottom-gate structures. Improvements in the electrical properties of the a-Si:H TFTs resulting from these additionalprocessing steps are discussed.
Publisher
Springer Science and Business Media LLC
Reference10 articles.
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