Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1289493
Reference21 articles.
1. Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$
2. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
3. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
4. 1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots
5. Independent manipulation of density and size of stress-driven self-assembled quantum dots
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1. Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties;Japanese Journal of Applied Physics;2022-07-28
2. Вплив дефектних станів інтерфейсу на фотоелектричні властивості гетероструктур InxGa1-xAs/GaAs з квантовими точками;Ukrainian Journal of Physics;2022-02-08
3. Impact of dislocations in InAs quantum dot with InGaAs strain-reducing layer structures on their optical properties;Japanese Journal of Applied Physics;2021-02-24
4. Structural and Optical Characteristics of InAs QDs Stacked on GaAs Substrate by Molecular Beam Epitaxy;Materials Today: Proceedings;2019
5. Stacking of InAs QDs with Different Spacer Layer Thickness on GaAs Substrate by Molecular Beam Epitaxy;Advanced Science Letters;2018-08-01
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