Kinetics of large B clusters in crystalline and preamorphized silicon-Reference-Cited by-同舟云学术

Kinetics of large B clusters in crystalline and preamorphized silicon

Published:2011-10 Issue:7 Volume:110 Page:073524
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Aboy Maria,Pelaz Lourdes,Bruno Elena,Mirabella Salvo,Boninelli Simona

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3639280

Reference39 articles.

1. A. Armigliato, D. Nobili, P. Ostoja, M. Servidori, and S. Solmi, in Semiconductor Silicon 1977, edited by H. Huff and E. Sirtl (The Electrochemical Society, Princeton, NJ, 1977), Vol. 77–2, pp. 638.

2. Transient enhanced diffusion of boron in Si

3. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

4. Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

5. A comparative study of dopant activation in boron, BF/sub 2/, arsenic, and phosphorus implanted silicon

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