Defect generation by nitrogen during pulsed sputter deposition of GaN-Reference-Cited by-同舟云学术

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Defect generation by nitrogen during pulsed sputter deposition of GaN

Published:2018-11-07 Issue:17 Volume:124 Page:175701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Steib Frederik¹²,Remmele Thilo³,Gülink Jan¹²^ORCID,Fündling Sönke¹²,Behres Alexander⁴,Wehmann Hergo-Heinrich¹²^ORCID,Albrecht Martin³^ORCID,Straßburg Martin⁴,Lugauer Hans-Jürgen⁴^ORCID,Waag Andreas¹²

Affiliation:

1. Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology, Braunschweig University of Technology, 38092 Braunschweig, Germany

2. Epitaxy Competence Center ec2, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany

3. Leibniz Institute for Crystal Growth, Max-Born-Straße 2, 12489 Berlin, Germany

4. Osram Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany

Funder

Bundesministerium für Bildung und Forschung

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5037340

Reference16 articles.

1. Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

2. Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition

3. Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition

4. InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

5. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of plasma discharge pulse length for GaN film crystallinity on sapphire substrate by high density convergent plasma sputtering device;Journal of Vacuum Science & Technology A;2024-07-25

2. Determination of effective Ga/N ratio to control GaN growth behavior in liquid-target reactive magnetron sputter epitaxy;Materials Science in Semiconductor Processing;2024-06

3. Exponential relaxation of the energy and desorption dynamics of atoms colliding with a surface;Physica Scripta;2024-02-09

4. The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits;Materials Science in Semiconductor Processing;2021-08

5. Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources;ACS Omega;2020-10-08

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