Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition-Reference-Cited by-同舟云学术

Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition

Published:2017-06-06 Issue:10 Volume:214 Page:1700244
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kim Hyeryun¹,Ohta Jitsuo¹²,Ueno Kohei¹,Kobayashi Atsushi¹,Fujioka Hiroshi¹³

Affiliation:

1. Institute of Industrial Science (IIS); The University of Tokyo; 4-6-1 Komaba Meguro-ku Tokyo 153-8505 Japan

2. PRESTO; Japan Science and Technology Agency (JST); 4-1-8 Honcho Kawaguchi Saitama 332-0012 Japan

3. ACCEL; Japan Science and Technology Agency (JST); 5 Sanbancho Chiyoda-ku Tokyo 102-0075 Japan

Funder

Japan Science and Technology Corporation

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition

4. Crystallinity of GaN Thin Films Directly Grown on Metal Foils by the Reactive Evaporation Method

5. Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

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1. High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer;Applied Physics Letters;2020-07-13

2. Emergence of high quality sputtered III-nitride semiconductors and devices;Semiconductor Science and Technology;2019-08-12

3. Defect generation by nitrogen during pulsed sputter deposition of GaN;Journal of Applied Physics;2018-11-07