Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
Funder
Leibniz-Gemeinschaft (Leibniz Association)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4950707
Reference41 articles.
1. Stretchable, Curvilinear Electronics Based on Inorganic Materials
2. Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires
3. Flexible electronics based on inorganic nanowires
4. The Controlled Growth of GaN Nanowires
5. Threading defect elimination in GaN nanowires
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