Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering-Reference-Cited by-同舟云学术

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Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

Published:2017-12-01 Issue:12 Volume:5 Page:126102
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Mater.

Author:

Ueno Kohei¹,Fudetani Taiga¹,Arakawa Yasuaki¹,Kobayashi Atsushi¹,Ohta Jitsuo¹²^ORCID,Fujioka Hiroshi¹³

Affiliation:

1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

2. PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

3. ACCEL, Japan Science and Technology Agency (JST), 5 Sanbancho, Chiyoda, Tokyo 102-0075, Japan

Funder

MEXT | JST | Accelerated Innovation Research Initiative Turning Top Science and Ideas into High-Impact Values

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Reference24 articles.

1. Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

2. n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

3. Hybrid tunnel junction contacts to III–nitride light-emitting diodes

4. High Si and Ge n-type doping of GaN doping - Limits and impact on stress

5. Ge doping of GaN beyond the Mott transition

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1. Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect;Materials;2024-07-05

2. Heavy Ge Doping in GaN via Pulsed Sputtering to Tailor the Optical Bandgap Energy;physica status solidi (a);2024-04-21

3. Origin of Black Color in Heavily Doped n‐Type GaN Crystal;physica status solidi (b);2024-03-16

4. Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga target;Applied Physics Express;2024-03-01

5. Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique;Applied Physics Express;2024-03-01

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