n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts
Author:
Affiliation:
1. ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
2. Millimeter-Wave Electronics Group, ETH-Zürich, CH-8092 Zürich, Switzerland
Funder
Swiss National Science Foundation (Schweizerische Nationalfonds)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4902347
Reference11 articles.
1. 220GHz fT and 400GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic
2. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
3. Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates
4. High Si and Ge n-type doping of GaN doping - Limits and impact on stress
5. Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz
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