Formation of bubbles in BF+2‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96857
Reference15 articles.
1. The behaviour of boron molecular ion implants into silicon
2. Electrical properties of Si heavily implanted with boron molecular ions
3. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si
4. Influence of F and Cl on the recrystallization of ion‐implanted amorphous Si
5. Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon
Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A failure mechanism and improved method for abnormal IDS leakage current of shield gate trench MOSFET;Materials Science in Semiconductor Processing;2023-11
2. Formation and evolution of F nanobubbles in amorphous and crystalline Si;Applied Physics Letters;2008-08-11
3. Point defect engineering in preamorphized silicon enriched with fluorine;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
4. Evidences of F-induced nanobubbles as sink for self-interstitials in Si;Applied Physics Letters;2006-10-23
5. Large fluorine-vacancy clusters in Si and their capture efficiency for self-interstitials;Applied Physics Letters;2006-08-28
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3