Evidences of F-induced nanobubbles as sink for self-interstitials in Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2364271
Reference17 articles.
1. Extended defects in shallow implants
2. Implantation and transient B diffusion in Si: The source of the interstitials
3. Mechanisms of implant damage annealing and transient enhanced diffusion in Si
4. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
5. Effect of fluorine on the diffusion of boron in ion implanted Si
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