High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3687199
Reference17 articles.
1. Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface
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4. Band structure and confined energy levels of the Si3N4/Si/GaAs system
5. Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers
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1. Study of the effect of experimental conditions on atomic layer deposition of aluminum nitride films;Highlights in Science, Engineering and Technology;2023-07-09
2. Positive Shifting of Vth with Enhanced DC Performance in AlGaN/GaN Schottky-Gate HEMT through Optimized UV/O3 Treated Gate Interface and Thermal Engineering;ECS Journal of Solid State Science and Technology;2022-06-01
3. Nitrogen Plasma Etching and Surface Passivation of GaAs via Plasma-Enhanced Atomic Layer Deposition;Integrated Ferroelectrics;2021-09-02
4. Combined Implications of UV/O3 Interface Modulation with HfSiOX Surface Passivation on AlGaN/AlN/GaN MOS-HEMT;Crystals;2021-01-28
5. High temperature capacitors using AlN grown by MBE as the dielectric;Journal of Vacuum Science & Technology B;2018-07
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