High temperature capacitors using AlN grown by MBE as the dielectric-Reference-Cited by-同舟云学术

High temperature capacitors using AlN grown by MBE as the dielectric

Published:2018-07 Issue:4 Volume:36 Page:041202
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Ghosh Pijush K.,Sarollahi Mirsaeid,Li Chen,White Thomas,Debu Desalegn T.,Yan Qigeng,Kuchuk Andrian¹,Kumar Rahul²,Shetty Satish¹,Salamo Gregory J.²,Ware Morgan E.³

Affiliation:

1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701

2. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

3. Electrical Engineering Department, University of Arkansas, Fayetteville, Arkansas 72701

Funder

National Science Foundation

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.5033931

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1. Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface;Photonics;2023-10-30

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3. On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates;Semiconductors;2019-11

4. Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition;Physica B: Condensed Matter;2019-06