Electrical current-induced gradual failure of crystalline Ge2Sb2Te5 for phase-change memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818684
Reference18 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Phase-change materials for rewriteable data storage
3. Phase-Change Behavior of Stoichiometric Ge[sub 2]Sb[sub 2]Te[sub 5] in Phase-Change Random Access Memory
4. Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films
5. Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field
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1. In situ insight into temperature-dependent microstructure evolution of carbon doped phase change materials;Journal of Applied Physics;2023-11-22
2. Atomic Layer Deposition of Sb 2 Te 3 /GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory;Advanced Materials;2022-11-03
3. Endurance of chalcogenide optical phase change materials: a review: erratum;Optical Materials Express;2022-10-04
4. Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells;AIP Advances;2022-06-01
5. Endurance of chalcogenide optical phase change materials: a review;Optical Materials Express;2022-05-10
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