Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3184584
Reference11 articles.
1. Phase-Change Behavior of Stoichiometric Ge[sub 2]Sb[sub 2]Te[sub 5] in Phase-Change Random Access Memory
2. Crystallization Behavior and Physical Properties of Sb-Excess Ge[sub 2]Sb[sub 2+x]Te[sub 5] Thin Films for Phase Change Memory (PCM) Devices
3. Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films
4. Electric-Field-Induced Mass Movement of Ge[sub 2]Sb[sub 2]Te[sub 5] in Bottleneck Geometry Line Structures
5. Change of Damage Mechanism by the Frequency of Applied Pulsed DC in the Ge[sub 2]Sb[sub 2]Te[sub 5] Line
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