Atomic Layer Deposition of Sb <sub>2</sub> Te <sub>3</sub> /GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Sb ₂ Te ₃ /GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory

Published:2022-11-03 Issue:50 Volume:34 Page:2207143
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Yoo Chanyoung¹,Jeon Jeong Woo¹,Yoon Seungjae¹²,Cheng Yan³,Han Gyuseung¹²,Choi Wonho¹,Park Byongwoo¹,Jeon Gwangsik¹,Jeon Sangmin¹,Kim Woohyun¹,Zheng Yonghui³,Lee Jongho⁴,Ahn Junku⁴,Cho Sunglae⁴,Clendenning Scott B.⁵,Karpov Ilya V.⁵,Lee Yoon Kyung⁶,Choi Jung‐Hae²,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of Korea

2. Electronic Materials Research Center Korea Institute of Science and Technology Seoul 02792 Republic of Korea

3. Key Laboratory of Polar Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China

4. SK Hynix Inc. Icheon Gyeonggi 17336 Republic of Korea

5. Components Research Intel Corporation Hillsboro OR 97124 USA

6. Division of Advanced Materials Engineering Jeonbuk National University Jeonju Jeonbuk 54896 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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