Effect of ultraviolet irradiation upon the recombination lifetime of silicon wafers covered with a dielectric film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109785
Reference15 articles.
1. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition
2. Formation of device quality Si/SiO2 interfaces at low substrate temperatures by remote plasma enhanced chemical vapor deposition of SiO2
3. Thermal stabilization of device quality films deposited at low temperatures
4. Silicon dioxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition
5. A comparative study of the electron trapping and thermal detrapping in SiO2prepared by plasma and thermal oxidation
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A model for minority carrier lifetime variation in the oxide–silicon structure following 253.7 nm ultraviolet irradiation;Journal of Applied Physics;1998-05-15
2. Trap generation in CVD SiO2 subjected to 253.7 nm ultraviolet irradiation;Electronics Letters;1997
3. Interface traps creation by sub‐band gap irradiation in silicon dioxide on silicon without applied electric field;Journal of Applied Physics;1996-03
4. Ultraviolet (UV) Irradiation Effect on Minority-Carrier Recombination Lifetime in Silicon Wafers with Oxide and Nitride Films;MRS Proceedings;1993
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