A model for minority carrier lifetime variation in the oxide–silicon structure following 253.7 nm ultraviolet irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367353
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1. Preliminary benchmarks and analysis of boundary conditions in a trenched microstructured silicon radiation detector;Journal of Applied Physics;2022-04-07
2. Defect Generation at Charge-Passivated $\hbox{Si}$–$\hbox{SiO}_{2}$ Interfaces by Ultraviolet Light;IEEE Transactions on Electron Devices;2010-08
3. Impact of band gap narrowing and surface recombination on photoelectrothermal modulated optical reflectance power curves;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
4. Fixed oxide charge in n-type silicon wafers studied by ac surface photovoltage technique;Semiconductor Science and Technology;1999-12-09
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