Interface traps generated by internal photoemission in Al‐SiO2‐Si structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94135
Reference21 articles.
1. Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide Interface
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3. Origin of Interface States and Oxide Charges Generated by Ionizing Radiation
4. Chemical and Structural Aspects of the Irradiation Behavior of SiO2 Films on Silicon
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