A comparative study of the electron trapping and thermal detrapping in SiO2prepared by plasma and thermal oxidation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351703
Reference30 articles.
1. Silicon Oxidation in an Oxygen Plasma Excited by Microwaves
2. Silicon Oxide Films Grown in a Microwave Discharge
3. Preparation and properties of plasma-anodized silicon dioxide films
4. An improvement of the interface properties of plasma anodized SiO2/Si system for the fabrication of MOSFET's
5. Plasma oxidation of silicon
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