Intermixing of InGaAs/InP multiple quantum well structures by Ga implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100918
Reference10 articles.
1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
2. Impurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures
3. Interdiffusion of Al and Ga in Si-Implanted GaAs–AlAs Superlattices
4. Comparative studies of ion‐induced mixing of GaAs‐AlAs superlattices
5. Disorder of a GaxIn1-xAsyP1-y-InP quantum well by Zn diffusion
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1. Nanoscale ion intermixing induced activation of Fe2O3/MnO2 composites for application in lithium ion batteries;Journal of Materials Chemistry A;2017
2. Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells;Journal of Applied Physics;2003-04-15
3. Intermixing Characteristics of Strained-InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion;Japanese Journal of Applied Physics;1999-11-15
4. Plasma immersion Ar+ ion implantation induced disorder in strained InGaAsP multiple quantum wells;Electronics Letters;1998
5. Electro-absorptive properties of interdiffused InGaAsP/InP quantum wells;Journal of Applied Physics;1997-10-15
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