Electro-absorptive properties of interdiffused InGaAsP/InP quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365752
Reference37 articles.
1. High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes
2. Strained InGaAsP multiquantum wells for optical electroabsorption waveguide modulators
3. High performance QCSE phase modulator for the 1.5–1.55 μm fibre band
4. InGaAs(P)/InP MQW mixing by Zn diffusion, Ge and S implantation for optoelectronic applications
5. InGaAs(P)/InP MQW mixing by Zn diffusion, Ge and S implantation for optoelectronic applications
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1. Effects of interdiffusion and electric field on the optical rectification coefficient of GaAs/AlwGa1−wAs systems: crossover from single to multiple quantum wells;Applied Physics A;2020-03-17
2. Lamb wave acousto-optic modulator in ZnO/MgO multiple quantum wells and comparison with classical modulator;Applied Optics;2015-10-09
3. Transistor based quantum well optical modulator and its performance in RF links;SPIE Proceedings;2010-08-19
4. Thermally induced diffusion in GaInNAs∕GaAs and GaInAs∕GaAs quantum wells grown by solid source molecular beam epitaxy;Journal of Applied Physics;2005-01
5. Photocurrent spectroscopy analysis of widely tunable negative-chirp quantum-well intermixed laser-modulator transmitters;Applied Physics Letters;2005
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