Intermixing Characteristics of Strained-InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion-Reference-Cited by-同舟云学术

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Intermixing Characteristics of Strained-InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion

Published:1999-11-15 Issue:Part 2, No. 11B Volume:38 Page:L1303-L1305
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Park Jung Woo,Kim Hyun Soo,Kim Jung Soo,Oh Dae Kon,Oh Kwang Ryong,Yeo Duk Ho,Kim Sung June

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAsP/InP integrated waveguide photodetector pair using quantum well intermixing;Optical and Quantum Electronics;2016-07-15

2. Microstructural and compositional modification of In0·53Ga0·47As/In0·52Al0·48As multiquantum wells using rapid thermal annealing process;Materials Science and Technology;2011-08

3. Quantum well intermixing of In1-xGaxAs/InP and In1-xGaxAs/In1-xGaxAs1-yPymultiple-quantum-well structures by using the impurity-free vacancy diffusion technique;Semiconductor Science and Technology;2000-09-21

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