Disorder of a GaxIn1-xAsyP1-y-InP quantum well by Zn diffusion
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Two‐dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition
2. cw operation of 1.57‐μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low‐pressure metalorganic chemical vapor deposition
3. Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys
4. First observation of the two‐dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition
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1. Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells;2008 International Conference on Nanoscience and Nanotechnology;2008-02
2. Argon plasma exposure enhanced intermixing in an undoped InGaAsP∕InP quantum-well structure;Journal of Applied Physics;2006-08-15
3. Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R;Chinese Physics Letters;2005-08-25
4. New methods of defect-enhanced quantum well intermixing and demonstrated integrated distributed-feedback laser modulator;Optoelectronic Materials and Devices II;2000-07-11
5. Characteristics of intermixed InGaAs/InGaAsP Multi-Quantum-Well Structure;Japanese Journal of Applied Physics;2000-03-15
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