Evidence for spatially indirect recombination in Ga0.52In0.48P
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349364
Reference28 articles.
1. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
2. Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxy
3. Excitation intensity dependence of photoluminescence in Ga0.52In0.48P
4. Effect of growth rate on properties of Ga 0.51 In 0.49 P grown by organometallic vapor phase epitaxy
5. Effect of growth rate on the band gap of Ga0.5In0.5P
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